PART |
Description |
Maker |
STH13NB60FI STH13NB60 STW13NB60 |
N-CHANNEL Power MOS MOSFET N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET N - CHANNEL 600V - 0.48W - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
|
STW12NC60 |
N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
STGF20NB60S |
N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
SVF13N50F |
13A, 500V N-CHANNEL MOSFET
|
Silan Microelectronics ...
|
STD10NF10-1 STD10NF10T4 STD10NF10 D10NF10 |
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET?/a> II POWER MOSFET N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET N-CHANNEL 100V - 0.115 OHM - 13A IPAK/DPAK LOW GATE CHARGE STRIPFET⒙ II POWER MOSFET N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
FCA16N60N |
600V N-Channel MOSFET SupreMOS™; 3-TO-3PN 16 A, 600 V, 0.199 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel MOSFET 600V, 16A, 0.170W
|
Fairchild Semiconductor, Corp.
|
SMS840 |
0.13A , 50V , RDS(ON) 10 P-Channel Enhancement MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
FDS6679AZ |
P-Channel PowerTrench MOSFET -30V, -13A, 9mOhm
|
Fairchild Semiconductor Corporation
|
BUZ71A |
13A/ 50V/ 0.120 Ohm/ N-Channel Power MOSFET 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|